Quantum Effects for Spintronic Devices Optimization

Abstract

This work is mainly dedicated to the study of spin dependent transport in mag- netic nanostructures. The principal objective is the optimization of the magnetoresistive performance of such structures, in order to built high density Magnetic Random Access Memories (MRAM). Nevertheless, new resistive properties are also found, that could be useful for another type of non-volatile memory device, in this case, Resistive Random Access Memories (ReRAM). The thesis is basically divided into two parts, the ¯rst one considers the theoretical analysis of multilayered magnetic junctions and the second one is dedicated to the experimental study of magnetic granular multilayers.